complementary silicon high-power transistors ...for g eneralpurpose power amplifier and switching applications. ? 25 a collector current ? low leakage current e i ceo = 1.0 ma @ 30 and 60 v ? excellent dc gain e h fe = 40 typ @ 15 a ? high current gain bandwidth product e ? h fe ? = 3.0 min @ i c = 1.0 a, f = 1.0 mhz ??????????????????????? ??????????????????????? maximum ratings ??????????? ? ????????? ? ??????????? rating ??? ? ? ? ??? symbol ???? ? ?? ? ???? tip35a tip36a ??? ? ? ? ??? tip35b tip36b ???? ? ?? ? ???? tip35c tip36c ??? ? ? ? ??? unit ??????????? ??????????? collectoremitter voltage ??? ??? v ceo ???? ???? 60 v ??? ??? 80 v ???? ???? 100 v ??? ??? vdc ??????????? ??????????? collectorbase voltage ??? ??? v cb ???? ???? 60 v ??? ??? 80 v ???? ???? 100 v ??? ??? vdc ??????????? ??????????? emitterbase voltage ??? ??? v eb ????????? ????????? 5.0 ??? ??? vdc ??????????? ??????????? collector current e continuous peak (1) ??? ??? i c ????????? ????????? 25 40 ??? ??? adc ??????????? ??????????? base current e continuous ??? ??? i b ????????? ????????? 5.0 ??? ??? adc ??????????? ? ????????? ? ? ????????? ? ??????????? total power dissipation @ t c = 25 c derate above 25 c ??? ? ? ? ? ? ? ??? p d ????????? ? ??????? ? ? ??????? ? ????????? 125 1.0 ??? ? ? ? ? ? ? ??? watts w/ c ??????????? ? ????????? ? ??????????? operating and storage junction temperature range ??? ? ? ? ??? t j , t stg ????????? ? ??????? ? ????????? 65 to +150 ??? ? ? ? ??? c ??????????? ??????????? unclamped inductive load ??? ??? e sb ????????? ????????? 90 ??? ??? mj ??????????????????????? ? ????????????????????? ? ??????????????????????? thermal characteristics ???????????? ???????????? characteristic ????? ????? symbol ?????? ?????? max ??? ??? unit ???????????? ???????????? thermal resistance, junction to case ????? ????? r q jc ?????? ?????? 1.0 ??? ??? c/w ???????????? ???????????? junctiontofreeair thermal resistance ????? ????? r q ja ?????? ?????? 35.7 ??? ??? c/w (1) pulse test: pulse width = 10 ms, duty cycle 10%. preferred devices are on semiconductor recommended choices for future use and best overall value. on semiconductor ? semiconductor components industries, llc, 2002 january, 2002 rev. 4 1 publication order number: tip35a/d tip35a tip35b tip35c tip36a tip36b tip36c 25 ampere complementary silicon power transistors 60100 volts 125 watts *on semiconductor preferred device * npn pnp * * * case 340d02 to218ac
tip35a tip35b tip35c tip36a tip36b tip36c http://onsemi.com 2 figure 1. power derating t c , case temperature ( c) 0 125 0 25 175 75 100 75 100 50 125 25 150 p d , power dissipation (watts) 50 ????????????????????????????????? ????????????????????????????????? electrical characteristics (t c = 25 c unless otherwise noted) ?????????????????????? ?????????????????????? characteristic ????? ????? symbol ??? ??? min ???? ???? max ??? ??? unit ????????????????????????????????? ????????????????????????????????? off characteristics ?????????????????????? ? ???????????????????? ? ? ???????????????????? ? ?????????????????????? collectoremitter sustaining voltage (1) (i c = 30 ma, i b = 0) tip35a, tip36a tip35b, tip36b tip35c, tip36c ????? ? ??? ? ? ??? ? ????? v ceo(sus) ??? ? ? ? ? ? ? ??? 60 80 100 ???? ? ?? ? ? ?? ? ???? e e e ??? ? ? ? ? ? ? ??? vdc ?????????????????????? ? ???????????????????? ? ? ???????????????????? ? ?????????????????????? collectoremitter cutoff current (v ce = 30 v, i b = 0) tip35a, tip36a (v ce = 60 v, i b = 0) tip35b, tip35c, tip36b, tip36c ????? ? ??? ? ? ??? ? ????? i ceo ??? ? ? ? ? ? ? ??? e e ???? ? ?? ? ? ?? ? ???? 1.0 1.0 ??? ? ? ? ? ? ? ??? ma ?????????????????????? ?????????????????????? collectoremitter cutoff current (v ce = rated v ceo , v eb = 0) ????? ????? i ces ??? ??? e ???? ???? 0.7 ??? ??? ma ?????????????????????? ? ???????????????????? ? ?????????????????????? emitterbase cutoff current (v eb = 5.0 v, i c = 0) ????? ? ??? ? ????? i ebo ??? ? ? ? ??? e ???? ? ?? ? ???? 1.0 ??? ? ? ? ??? ma ????????????????????????????????? ????????????????????????????????? on characteristics (1) ?????????????????????? ? ???????????????????? ? ?????????????????????? dc current gain (i c = 1.5 a, v ce = 4.0 v) (i c = 15 a, v ce = 4.0 v) ????? ? ??? ? ????? h fe ??? ? ? ? ??? 25 15 ???? ? ?? ? ???? e 75 ??? ? ? ? ??? e ?????????????????????? ? ???????????????????? ? ? ???????????????????? ? ?????????????????????? collectoremitter saturation voltage (i c = 15 a, i b = 1.5 a) (i c = 25 a, i b = 5.0 a) ????? ? ??? ? ? ??? ? ????? v ce(sat) ??? ? ? ? ? ? ? ??? e e ???? ? ?? ? ? ?? ? ???? 1.8 4.0 ??? ? ? ? ? ? ? ??? vdc ?????????????????????? ? ???????????????????? ? ?????????????????????? baseemitter on voltage (i c = 15 a, v ce = 4.0 v) (i c = 25 a, v ce = 4.0 v) ????? ? ??? ? ????? v be(on) ??? ? ? ? ??? e e ???? ? ?? ? ???? 2.0 4.0 ??? ? ? ? ??? vdc ????????????????????????????????? ????????????????????????????????? dynamic characteristics ?????????????????????? ? ???????????????????? ? ?????????????????????? smallsignal current gain (i c = 1.0 a, v ce = 10 v, f = 1.0 khz) ????? ? ??? ? ????? h fe ??? ? ? ? ??? 25 ???? ? ?? ? ???? e ??? ? ? ? ??? e ?????????????????????? ? ???????????????????? ? ?????????????????????? currentgain e bandwidth product (i c = 1.0 a, v ce = 10 v, f = 1.0 mhz) ????? ? ??? ? ????? f t ??? ? ? ? ??? 3.0 ???? ? ?? ? ???? e ??? ? ? ? ??? mhz (1) pulse test: pulse width = 300 m s, duty cycle 2.0%.
tip35a tip35b tip35c tip36a tip36b tip36c http://onsemi.com 3 figure 2. switching time equivalent test circuits 0.3 figure 3. turnon time i c , collector current (amperes) 0.02 1.0 30 0.07 1.0 10 t j = 25 c i c /i b = 10 v cc = 30 v v be(off) = 2 v t, time (s) m 0.5 0.3 0.1 0.05 0.5 3.0 5.0 0.03 0.7 2.0 0.7 7.0 t r 0.2 2.0 20 t d (pnp) (npn) turnon time turnoff time +2.0 v 0 t r 20 ns -11.0 v 10 to 100 m s 3.0 r l -30 v v cc duty cycle 2.0% 10 r b to scope t r 20 ns v bb +4.0 v for curves of figures 3 & 4, r b & r l are varied. input levels are approximately as shown. for npn, reverse all polarities. 0 +9.0 v -11.0 v 10 to 100 m s t r 20 ns duty cycle 2.0% 3.0 r l -30 v v cc 10 r b to scope t r 20 ns 0.5 1.0 2.0 7.0 0.3 3.0 5.0 0.7 i c , collector current (amperes) figure 4. turnoff time 10 t, time (s) m 7.0 5.0 3.0 2.0 1.0 0.7 0.5 0.3 0.2 0.1 10 20 30 t j = 25 c v cc = 30 v i c /i b = 10 i b1 = i b2 t s t f (pnp) (npn) t s t f i c , collector current (amps) h fe , dc current gain figure 5. dc current gain 200 500 0.2 0.5 2.0 100 0.1 100 50 20 10 1.0 v ce = 4.0 v t j = 25 c 5.0 10 20 5.0 50 pnp npn 1000 2.0 1.0
tip35a tip35b tip35c tip36a tip36b tip36c http://onsemi.com 4 forward bias there are two limitations on the power handling ability of a transistor: average junction temperature and second breakdown. safe operating area curves indicate i c v ce limits of the transistor that must be observed for reliable operation; i.e., the transistor must not be subjected to greater dissipation than the curves indicate. the data of figure 6 is based on t c = 25 c; t j(pk) is variable depending on power level. second breakdown pulse limits are valid for duty cycles to 10% but must be derated when t c 25 c. second breakdown limitations do not derate the same as thermal limitations. reverse bias for inductive loads, high voltage and high current must be sustained simultaneously during turnoff, in most cases, with the base to emitter junction reverse biased. under these conditions the collector voltage must be held to a safe level at or below a specific value of collector current. this can be accomplished by several means such as active clamping, rc snubbing, load line shaping, etc. the safe level for these devices is specified as reverse bias safe operating area and represents the voltagecurrent conditions during reverse biased turnoff. this rating is verified under clamped conditions so that the device is never subjected to an avalanche mode. figure 7 gives rbsoa characteristics. v ce , collector-emitter voltage (volts) 7.0 20 1.0 50 100 0.2 0 0.5 secondary breakdown thermal limit bonding wire limit 1.0ms dc 300 m s 2.0 1.0 100 30 i c , collector current (amps) 10ms figure 6. maximum rated forward bias safe operating area 50 20 10 5.0 0.3 2.0 3.0 5.0 10 30 70 t c = 25 c tip35a, 36a tip35b, 36b tip35c, 36c v ce , collector-emitter voltage (volts) 40 60 0 80 100 5.0 0 15 20 40 30 i c , collector current (amps) figure 7. maximum rated forward bias safe operating area 25 10 10 20 30 50 70 90 t j 100 c tip35a tip36a tip35b tip36b tip35c tip36c
tip35a tip35b tip35c tip36a tip36b tip36c http://onsemi.com 5 figure 8. inductive load switching test circuit voltage and current waveforms notes: a. l1 and l2 are 10 mh, 0.11 w , chicago standard transformer corporation c2688, or equivalent. b. input pulse width is increased until i cm = 3.0 a. c. for npn, reverse all polarities. input 50 mje180 r bb1 20 r bb2 = 100 v bb2 = 0 v bb1 = 10 v v ce monitor l1 (see note a) l2 (see note a) tut v cc = 10 v i c monitor + - r s = 0.1 w 50 + - 5.0 v 0 -3.0 a -10 v t w = 6.0 ms (see note b) input voltage collector current collector voltage v (br)cer 0 0 100 ms
tip35a tip35b tip35c tip36a tip36b tip36c http://onsemi.com 6 package dimensions case 340d02 issue e style 1: pin 1. base 2. collector 3. emitter 4. collector a d v g k s l u b q 123 4 notes: 1. dimensioning and tolerancing per ansi y14.5m, 1982. 2. controlling dimension: millimeter. e c j h dim min max min max inches millimeters a --- 20.35 --- 0.801 b 14.70 15.20 0.579 0.598 c 4.70 4.90 0.185 0.193 d 1.10 1.30 0.043 0.051 e 1.17 1.37 0.046 0.054 g 5.40 5.55 0.213 0.219 h 2.00 3.00 0.079 0.118 j 0.50 0.78 0.020 0.031 k 31.00 ref 1.220 ref l --- 16.20 --- 0.638 q 4.00 4.10 0.158 0.161 s 17.80 18.20 0.701 0.717 u 4.00 ref 0.157 ref v 1.75 ref 0.069
tip35a tip35b tip35c tip36a tip36b tip36c http://onsemi.com 7 notes
tip35a tip35b tip35c tip36a tip36b tip36c http://onsemi.com 8 on semiconductor and are trademarks of semiconductor components industries, llc (scillc). scillc reserves the right to make changes without further notice to any products herein. scillc makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does scillc assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. atypicalo parameters which may be provided in scill c data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. all operating parameters, including atypicalso must be validated for each customer application by customer's technical experts. scillc does not convey any license under its patent rights nor the rights of others. scillc products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body , or other applications intended to support or sustain life, or for any other application in which the failure of the scillc product could create a sit uation where personal injury or death may occur. should buyer purchase or use scillc products for any such unintended or unauthorized application, buyer shall indemnify and hold scillc and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthori zed use, even if such claim alleges that scillc was negligent regarding the design or manufacture of the part. scillc is an equal opportunity/affirmative action employer. publication ordering information japan : on semiconductor, japan customer focus center 4321 nishigotanda, shinagawaku, tokyo, japan 1410031 phone : 81357402700 email : r14525@onsemi.com on semiconductor website : http://onsemi.com for additional information, please contact your local sales representative. tip35a/d literature fulfillment : literature distribution center for on semiconductor p.o. box 5163, denver, colorado 80217 usa phone : 3036752175 or 8003443860 toll free usa/canada fax : 3036752176 or 8003443867 toll free usa/canada email : onlit@hibbertco.com n. american technical support : 8002829855 toll free usa/canada
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